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Showing results 1 to 4 of 4

Article
A Broadband PVT-Insensitive All-nMOS Noise-Canceling Balun-LNA for Subgigahertz Wireless Communication Applications
  • Kim, Dongmin ; 
  • Jang, Seunghyeok ; 
  • Lee, Junghyup ; 
  • Im, Donggu
  • 2021-02
  • Kim, Dongmin. (2021-02). A Broadband PVT-Insensitive All-nMOS Noise-Canceling Balun-LNA for Subgigahertz Wireless Communication Applications. IEEE Microwave and Wireless Components Letters, 31(2), 165–168. doi: 10.1109/LMWC.2020.3042233
  • Institute of Electrical and Electronics Engineers
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Article
A Hybrid Digital-Analog Compute-in-Memory Using Content-Addressable Memory With Flexible Multi-Bit Slicing
  • Jung, Sangwoo ; 
  • Lee, Hojin ; 
  • Park, Jiyong ; 
  • Lee, Yejin ; 
  • Park, Dahoon ; 
  • Shin, Hyunseob ; 
  • Yoon, Jong-Hyeok ; 
  • Kung, Jaeha
  • 2026-05
  • IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.73, no.5, pp.3452 - 3465
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Article
Doping-Dedoping Interplay to Realize Patterned/Stacked All-Polymer Optoelectronic Devices
  • Kim, Juhee ; 
  • Kang, Mingyun ; 
  • Cho, Jangwhan ; 
  • Yu, Seong Hoon ; 
  • Chung, Dae Sung
  • 2019-05
  • Kim, Juhee. (2019-05). Doping-Dedoping Interplay to Realize Patterned/Stacked All-Polymer Optoelectronic Devices. ACS Applied Materials & Interfaces, 11(20), 18580–18589. doi: 10.1021/acsami.9b03153
  • American Chemical Society
  • View : 1041
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Article
Tunneling Transistor with a Stacked Floating Electrode for Current Saturation
  • 2024-05
  • Heo, Su Jin. (2024-05). Tunneling Transistor with a Stacked Floating Electrode for Current Saturation. IEEE Electron Device Letters, 45(5), 925–928. doi: 10.1109/LED.2024.3376741
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 405
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