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Article
Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices
  • Kim, Kyongmin ; 
  • Kim, Eunkyeom ; 
  • Kim, Youngill ; 
  • Sok, Jung Hyun ; 
  • Park, Kyoungwan
  • 2016-12
  • Kim, Kyongmin. (2016-12). Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices. Journal of the Korean Physical Society, 69(12), 1798–1804. doi: 10.3938/jkps.69.1798
  • Korean Physical Society
  • View : 759
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