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Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices
- Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices
- Kim, K[Kim, Kyongmin]; Kim, E[Kim, Eunkyeom]; Kim, Y[Kim, Youngill]; Sok, JH[Sok, Jung Hyun]; Park, K[Park, Kyoungwan]
- Issue Date
- Journal of the Korean Physical Society, 69(12), 1798-1804
- Article Type
- Multi-Layer; Non-Volatile Memory; Resistive Switching; RRAM; ZnO
- Bipolar resistive switching in ZnO/SiOx bi-layer and ZnO/SiOx/ZnO tri-layer structures was investigated for nonvolatile memory applications. ZnO thin films were grown using the radiofrequency magnetron sputtering technique at room temperature. SiOx films were grown using plasma-enhanced chemical-vapor deposition at 200 °C. Multiple high-resistance states were observed during the set process. The high/low resistance state ratio was ~10 during ~100 on/off cycles. The tri-layer memory device exhibited better endurance properties than the bi-layer device. Because an asymmetric conducting filament has a weak point for charge conduction at the oxide interfaces, we attributed the good endurance property to the reproducible formation/rupture of “micro”-conducting filaments. Moreover, the dynamics of the oxygen ions in the SiOx layer plays an important role in resistive switching. © 2016, The Korean Physical Society.
- Korean Physical Society
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