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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 5 of 5

Article
Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices
  • Kim, Kyongmin ; 
  • Kim, Eunkyeom ; 
  • Kim, Youngill ; 
  • Sok, Jung Hyun ; 
  • Park, Kyoungwan
  • 2016-12
  • Kim, Kyongmin. (2016-12). Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices. Journal of the Korean Physical Society, 69(12), 1798–1804. doi: 10.3938/jkps.69.1798
  • Korean Physical Society
  • View : 759
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Article
Enhancing resistive switching behavior in double perovskites through doping and silver vacancies: A first-principles analysis
  • Arooj, Aqsa ; 
  • Imran, Muhammad ; 
  • Ahmad, Sarfraz ; 
  • Gatasheh, Mansour K. ; 
  • Hussain, Fayyaz ; 
  • Ali, Syed Mansoor ; 
  • Arif Khalil, Rana Muhammad ; 
  • Ehsan, Muhammad Fahad
  • 2025-08
  • Arooj, Aqsa. (2025-08). Enhancing resistive switching behavior in double perovskites through doping and silver vacancies: A first-principles analysis. Journal of Physics and Chemistry of Solids, 203. doi: 10.1016/j.jpcs.2025.112714
  • Elsevier
  • View : 49
  • Download : 0
Article
Exploring the Impact of Deposition Conditions on the Functionality of a-IGZO/AlOx-Based Sandwich Structures with Memory Effects
  • 2025-10
  • ACS Applied Electronic Materials, v.7, no.20, pp.9585 - 9598
  • American Chemical Society
  • View : 16
  • Download : 0

Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning

Article
Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning
  • Jang, Bongho ; 
  • Kim, Junil ; 
  • Lee, Jieun ; 
  • Jang, Jae-Won ; 
  • Kwon, Hyuk-Jun
  • 2024-08
  • Jang, Bongho. (2024-08). Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning. Journal of Materials Science and Technology, 189, 68–76. doi: 10.1016/j.jmst.2023.12.016
  • Elsevier
  • View : 141
  • Download : 68
Article
The impact of increasing Zr dopant concentration in Ruddlesden Popper perovskite to enhance Resistive Random-Access Memory performance: Using the DFT method
  • Hussain, Fayyaz ; 
  • Arooj, Aqsa ; 
  • Imran, Muhammad ; 
  • Tighezza, Ammar Mohamed ; 
  • Rasheed, Umbreen ; 
  • Khalil, R.M.Arif ; 
  • Ehsan, Muhammad Fahad
  • 2025-06
  • Hussain, Fayyaz. (2025-06). The impact of increasing Zr dopant concentration in Ruddlesden Popper perovskite to enhance Resistive Random-Access Memory performance: Using the DFT method. Journal of Molecular Graphics and Modelling, 137. doi: 10.1016/j.jmgm.2025.109000
  • Elsevier
  • View : 84
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