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Issue Date	Title Author(s) Journal	View
2016-12	Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices Kim, Kyongmin ; Kim, Eunkyeom ; Kim, Youngill ; Sok, Jung Hyun ; Park, Kyoungwan Journal of the Korean Physical Society, v.69, no.12, pp.1798 - 1804, 2016-12	529
2016-11-01	Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment Shang, Dashan ; Lee, Shinbuhm ; Sun, Young Solid State Ionics, v.295, pp.1 - 6, 2016-11-01	769

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