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  • Kim, Kyongmin
  • Kim, Eunkyeom
  • Kim, Youngill
  • Sok, Jung Hyun
  • Park, Kyoungwan
  • 2016-12
  • Kim, Kyongmin. (2016-12). Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices. Journal of the Korean Physical Society, 69(12), 1798–1804. doi: 10.3938/jkps.69.1798
  • Korean Physical Society
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  • 2016-11
  • Solid State Ionics, v.295, pp.1 - 6
  • Elsevier
  • View : 852
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