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Showing results 1 to 2 of 2
Issue Date
Title
Author(s)
Article
Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices
Kim, Kyongmin
;
Kim, Eunkyeom
;
Kim, Youngill
;
Sok, Jung Hyun
;
Park, Kyoungwan
2016-12
Kim, Kyongmin. (2016-12). Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices. Journal of the Korean Physical Society, 69(12), 1798–1804. doi: 10.3938/jkps.69.1798
Korean Physical Society
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Article
Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment
Shang, Dashan
;
Lee, Shinbuhm
;
Sun, Young
2016-11
Solid State Ionics, v.295, pp.1 - 6
Elsevier
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