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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Article
Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices
  • Kim, Kyongmin ; 
  • Kim, Eunkyeom ; 
  • Kim, Youngill ; 
  • Sok, Jung Hyun ; 
  • Park, Kyoungwan
  • 2016-12
  • Kim, Kyongmin. (2016-12). Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices. Journal of the Korean Physical Society, 69(12), 1798–1804. doi: 10.3938/jkps.69.1798
  • Korean Physical Society
  • View : 782
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Article
Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment
  • 2016-11
  • Solid State Ionics, v.295, pp.1 - 6
  • Elsevier
  • View : 885
  • Download : 0
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