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Showing results 1 to 4 of 4

Article
Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode
  • Hihath, Joshua ; 
  • Bruot, Christopher ; 
  • Nakamura, Hisao ; 
  • Asai, Yoshihiro ; 
  • Diez-Perez, Ismael ; 
  • Lee, Youngu ; 
  • Yu, Luping ; 
  • Tao, Nongjian
  • 2011-10
  • Hihath, Joshua. (2011-10). Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode. ACS Nano, 5(10), 8331–8339. doi: 10.1021/nn2030644
  • American Chemical Society
  • View : 561
  • Download : 0
Article
Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode
  • Hihath, Joshua ; 
  • Bruot, Christopher ; 
  • Nakamura, Hisao ; 
  • Asai, Yoshihiro ; 
  • Diez-Perez, Ismael ; 
  • Lee, Youngu ; 
  • Yu, Luping ; 
  • Tao, Nongjian
  • 2011-10
  • Hihath, Joshua. (2011-10). Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode. ACS Nano, 5(10), 8331–8339. doi: 10.1021/nn2030644
  • American Chemical Society
  • View : 1056
  • Download : 0
Article
n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates
  • Choi, Mi Kyung ; 
  • Han, Won Suk ; 
  • Kim, Young Yi ; 
  • Kong, Bo Hyun ; 
  • Cho, Hyung Koun ; 
  • Kim, Jae Hyun ; 
  • Seo, Hong-Seok ; 
  • Kim, Kang-Pil ; 
  • Lee, Jung-Ho
  • 2009-12
  • Choi, Mi Kyung. (2009-12). n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates. Journal of Materials Science: Materials in Electronics, 20(12), 1214–1218. doi: 10.1007/s10854-009-9854-y
  • Springer
  • View : 887
  • Download : 0
Article
n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates
  • Choi, Mi Kyung ; 
  • Han, Won Suk ; 
  • Kim, Young Yi ; 
  • Kong, Bo Hyun ; 
  • Cho, Hyung Koun ; 
  • Kim, Jae Hyun ; 
  • Seo, Hong-Seok ; 
  • Kim, Kang-Pil ; 
  • Lee, Jung-Ho
  • 2009-12
  • Choi, Mi Kyung. (2009-12). n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates. Journal of Materials Science: Materials in Electronics, 20(12), 1214–1218. doi: 10.1007/s10854-009-9854-y
  • Springer
  • View : 962
  • Download : 0
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