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Issue Date	Title Author(s) Journal	View
2016-07	Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications Seo, Jae Hwa ; Jo, Young-Woo ; Yoon, Young Jun ; Son, Dong-Hyeok ; Won, Chul-Ho ; Jang, Hwan Soo ; Kang, In Man ; Lee, Jung-Hee IEEE Electron Device Letters, v.37, no.7, pp.855 - 858, 2016-07	535

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