DGIST Scholar: Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

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Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

Title: Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

Author(s): Seo, JH[Seo, Jae Hwa] ; Jo, YW[Jo, Young-Woo] ; Yoon, YJ[Yoon, Young Jun] ; Son, DH[Son, Dong-Hyeok] ; Won, CH[Won, Chul-Ho] ; Jang, HS[Jang, Hwan Soo] ; Kang, IM[Kang, In Man] ; Lee, JH[Lee, Jung-Hee]

Subject: Al(In)N/Gan ; Aluminum ; Cutoff Frequency ; Device Characteristics ; Drain-Induced Barrier Lowering ; Drain Current ; Electron Mobility ; Field Effect Transistors ; Finfet ; Fins (Heat Exchange) ; High Electron Mobility Transistor (Hemt) ; High Electron Mobility Transistors ; I-V Characteristics ; Leakage Current ; Leakage Currents ; Low-Leakage Current ; MOS Devices ; Short-Channel Effect ; Short-Channel Effects (SCEs) ; Switching Applications ; TMAH Solution

Abstract: Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage (Ioff) < 8 × 10-8 A/mm at 7 V and < 1 × 10-6 A/mm at 100 V, which is four orders of improvement over IOFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz. © 2016 IEEE.