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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Article
Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications
  • Seo, Jae Hwa ; 
  • Jo, Young-Woo ; 
  • Yoon, Young Jun ; 
  • Son, Dong-Hyeok ; 
  • Won, Chul-Ho ; 
  • Jang, Hwan Soo ; 
  • Kang, In Man ; 
  • Lee, Jung-Hee
  • 2016-07
  • IEEE Electron Device Letters, v.37, no.7, pp.855 - 858
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 940
  • Download : 0

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

Article
Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance
  • Cho, Min Su ; 
  • Seo, Jae Hwa ; 
  • Lee, Sang Ho ; 
  • Jang, Hwan Soo ; 
  • Kang, In Man
  • 2020-07
  • Cho, Min Su. (2020-07). Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance. doi: 10.1109/ACCESS.2020.3011103
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 524
  • Download : 565
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