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Article
Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology
  • Lee, Hee Ho ; 
  • Jo, Sung-Hyun ; 
  • Bae, Myunghan ; 
  • Choi, Byung-Soo ; 
  • Kim, Jeongyeob ; 
  • Lyu, Hong-Kun ; 
  • Shin, Jang-Kyoo
  • 2015-01
  • Sensors and Materials, v.27, no.1, pp.135 - 142
  • M Y U Scientific Publishing Division
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