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Hole Current Enhancement Using W1-x Cr x Se2 Alloy Interface for p-Type WSe2 FETs

Article
Hole Current Enhancement Using W1-x Cr x Se2 Alloy Interface for p-Type WSe2 FETs
  • 2025-12
  • ACS Applied Materials & Interfaces, v.17, no.50, pp.68695 - 68702
  • American Chemical Society
  • View : 157
  • Download : 173

Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts

Article
Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts
  • Kwon, Hyeokjin ; 
  • Baik, Seunghun ; 
  • Jang, Jae Eun ; 
  • Jang, Jaewon ; 
  • Kim, Sunkook ; 
  • Grigoropoulos, Costas P. ; 
  • Kwon, Hyuk Jun
  • 2019-02
  • Kwon, Hyeokjin. (2019-02). Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts. Electronics, 8(2). doi: 10.3390/electronics8020222
  • MDPI AG
  • View : 772
  • Download : 226
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