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High-Performance Photomultiplication Photodiode with a 70 nm-Thick Active Layer Assisted by IDIC as an Efficient Molecular Sensitizer
- High-Performance Photomultiplication Photodiode with a 70 nm-Thick Active Layer Assisted by IDIC as an Efficient Molecular Sensitizer
- Neethipathi, Deepan Kumar; Ryu, Hwa Sook; Jang, Min Su; Yoon, Seongwon; Sim, Kyu Min; Woo, Han Young; Chung, Dae Sung
- DGIST Authors
- Chung, Dae Sung
- Issue Date
- ACS Applied Materials and Interfaces, 11(23), 21211-21217
- Article Type
- Author Keywords
- external quantum efficiency; nonfullerene acceptor; photomultiplication; polymer photodetector; detectivity
- Efficiency; Electronic structure; Fullerenes; Photodetectors; Photodiodes; Schottky barrier diodes; Detectivity; External quantum efficiency; nonfullerene acceptor; Photomultiplication; Polymer photodetectors; Quantum efficiency
- Here, a smart strategy for decreasing the active layer thickness of the organic photodiode down to 70 nm is demonstrated by utilizing a trap-assisted photomultiplication mechanism with the optimized chemical composition. Despite the presence of a high dark current, dramatically enhanced external quantum efficiency (EQE) via photomultiplication can allow significantly reduced active layer thickness, yielding high detectivity comparable to that of conventional Si. To achieve this, a spatially confined and electrically isolated optical sensitizer, 2,2′-((2Z,2′Z)-((4,4,9,9-tetrahexyl-4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene-2,7-diyl)bis(methanylylidene))bis(3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile (IDIC) was introduced strategically between a hole transport active layer and a cathode. A nonfullerene acceptor, IDIC, turned out to be a much more efficient sensitizer than the conventional fullerene-based acceptors, as confirmed by the effective lowering of the Schottky barrier under illumination, as well as the highest EQE exceeding 130 000%. Due to its favorable electronic structure as well as two-dimensional molecular structure, a high detectivity over 1012 Jones was successfully demonstrated while maintaining the active layer thickness as 70 nm. © 2019 American Chemical Society.
- American Chemical Society
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- Department of Energy Science and EngineeringPolymer Energy Materials Lab1. Journal Articles
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