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High-Performance Photomultiplication Photodiode with a 70 nm-Thick Active Layer Assisted by IDIC as an Efficient Molecular Sensitizer

Title
High-Performance Photomultiplication Photodiode with a 70 nm-Thick Active Layer Assisted by IDIC as an Efficient Molecular Sensitizer
Authors
Neethipathi, Deepan KumarRyu, Hwa SookJang, Min SuYoon, SeongwonSim, Kyu MinWoo, Han YoungChung, Dae Sung
DGIST Authors
Chung, Dae Sung
Issue Date
2019-06
Citation
ACS Applied Materials and Interfaces, 11(23), 21211-21217
Type
Article
Article Type
Article
Author Keywords
external quantum efficiencynonfullerene acceptorphotomultiplicationpolymer photodetectordetectivity
Keywords
EfficiencyElectronic structureFullerenesPhotodetectorsPhotodiodesSchottky barrier diodesDetectivityExternal quantum efficiencynonfullerene acceptorPhotomultiplicationPolymer photodetectorsQuantum efficiency
ISSN
1944-8244
Abstract
Here, a smart strategy for decreasing the active layer thickness of the organic photodiode down to 70 nm is demonstrated by utilizing a trap-assisted photomultiplication mechanism with the optimized chemical composition. Despite the presence of a high dark current, dramatically enhanced external quantum efficiency (EQE) via photomultiplication can allow significantly reduced active layer thickness, yielding high detectivity comparable to that of conventional Si. To achieve this, a spatially confined and electrically isolated optical sensitizer, 2,2′-((2Z,2′Z)-((4,4,9,9-tetrahexyl-4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene-2,7-diyl)bis(methanylylidene))bis(3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile (IDIC) was introduced strategically between a hole transport active layer and a cathode. A nonfullerene acceptor, IDIC, turned out to be a much more efficient sensitizer than the conventional fullerene-based acceptors, as confirmed by the effective lowering of the Schottky barrier under illumination, as well as the highest EQE exceeding 130 000%. Due to its favorable electronic structure as well as two-dimensional molecular structure, a high detectivity over 1012 Jones was successfully demonstrated while maintaining the active layer thickness as 70 nm. © 2019 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/10097
DOI
10.1021/acsami.9b01090
Publisher
American Chemical Society
Files:
There are no files associated with this item.
Collection:
Department of Energy Science and EngineeringPolymer Energy Materials Lab1. Journal Articles


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