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Photogating in the Graphene-Dye-Graphene Sandwich Heterostructure
Lee, Youngbin
;
Kim, Hyunmin
;
Kim, Soo
;
Whang, Dongmok
;
Cho, Jeong Ho
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Division of Biomedical Technology
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Title
Photogating in the Graphene-Dye-Graphene Sandwich Heterostructure
DGIST Authors
Kim, Hyunmin
Issued Date
2019-07
Citation
Lee, Youngbin. (2019-07). Photogating in the Graphene-Dye-Graphene Sandwich Heterostructure. doi: 10.1021/acsami.9b05280
Type
Article
Article Type
Article
Author Keywords
graphene
;
organic dye
;
atomic thickness
;
photogating
;
photodetector
Keywords
HYBRID STRUCTURES
;
RAMAN-SCATTERING
;
OXIDE
;
ORGANIC-DYE
;
BROAD-BAND
;
PHOTORESPONSE
;
PHOTODETECTORS
;
PHOTOCONDUCTOR
;
FILMS
ISSN
1944-8244
Abstract
In this work, we developed an atomically thin (∼2.5 nm) heterostructure consisting of a monolayer rhodamine 6G (R6G) film as a photoactive layer that was sandwiched between graphene films functioning as channels (graphene-R6G-graphene, G-R-G). Through a comparison of results of both photocurrent measurements and chemically enhanced Raman scattering (CERS) experiments, we found that our G-R-G heterostructure exhibited ∼7 and ∼30 times better performance than R6G-attached single-graphene (R6G-graphene, R-G) and MoS2 devices, respectively; here, the CERS enhancement factor was highly correlated with the relative photoinduced Dirac voltage change. Furthermore, the photocurrent of the G-R-G device was found to be ∼40 times better than that of the R-G photodetector. The top graphene was highly operative in the monolayer, of which the performance is significantly deteriorated by fluorescence and tailored charge transfer efficiency with the increment of R6G film thickness. Overall, the responsivity of the G-R-G photodetector was ∼40 times higher than that of the R-G photodetector because of the more efficient carrier transfer between the organic dye and graphene induced by weaker π-πinteractions between the top and bottom graphene channels in the former device. This atomically thin (∼2.5 nm) and highly photosensitive photodetector can be employed for post-Si-photodiode (PD) image sensors, single-photon detection devices, and optical communications. © 2019 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/10293
DOI
10.1021/acsami.9b05280
Publisher
American Chemical Society
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