Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Choi, Songhee | - |
dc.contributor.author | Oh, Junhyeob | - |
dc.contributor.author | Lee, Ji-Hyun | - |
dc.contributor.author | Jang, Jae Hyuck | - |
dc.contributor.author | Lee, Shinbuhm | - |
dc.date.accessioned | 2019-11-07T13:32:47Z | - |
dc.date.available | 2019-11-07T13:32:47Z | - |
dc.date.created | 2019-10-24 | - |
dc.date.issued | 2019-12 | - |
dc.identifier.issn | 1438-1656 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/10885 | - |
dc.description.abstract | Although vanadium oxide (VOx) phases are thermodynamically similar, Y-stabilized ZrO2 (YSZ) substrates show selective growth as single-crystalline films. However, in this study, we find that the films degrade with the formation of nanoislands when evaporating VOx onto YSZ at a substrate temperature >500 °C. The nanoislands are epitaxial, i.e., Y-doped VO2(R) at an oxygen partial pressure (Formula presented.) < 30 mTorr, and YVO4 at (Formula presented.) > 50 mTorr. Energy-dispersive X-ray spectroscopy shows that the rapid diffusion of vanadium and yttrium plays a critical role in film degradation. The degradation mechanism revealed herein guides the fabrication of VOx films for energy and electronic device applications. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | English | - |
dc.publisher | John Wiley & Sons Ltd. | - |
dc.title | Degradation mechanism of vanadium oxide films when grown on Y-stabilized ZrO2 above 500 oC | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adem.201900918 | - |
dc.identifier.wosid | 000490302600001 | - |
dc.identifier.scopusid | 2-s2.0-85074114068 | - |
dc.identifier.bibliographicCitation | Advanced Engineering Materials, v.21, no.12, pp.1900918 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | degradation | - |
dc.subject.keywordAuthor | diffusion | - |
dc.subject.keywordAuthor | vanadium oxides | - |
dc.subject.keywordAuthor | Y-stabilized ZrO2 | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | VO2 | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1900918 | - |
dc.citation.title | Advanced Engineering Materials | - |
dc.citation.volume | 21 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.type.docType | Article | - |
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