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Degradation mechanism of vanadium oxide films when grown on Y-stabilized ZrO2 above 500 oC
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Title
Degradation mechanism of vanadium oxide films when grown on Y-stabilized ZrO2 above 500 oC
Issued Date
2019-12
Citation
Choi, Songhee. (2019-12). Degradation mechanism of vanadium oxide films when grown on Y-stabilized ZrO2 above 500 oC. Advanced Engineering Materials, 21(12), 1900918. doi: 10.1002/adem.201900918
Type
Article
Author Keywords
degradationdiffusionvanadium oxidesY-stabilized ZrO2
Keywords
TRANSITIONVO2SEMICONDUCTOR
ISSN
1438-1656
Abstract
Although vanadium oxide (VOx) phases are thermodynamically similar, Y-stabilized ZrO2 (YSZ) substrates show selective growth as single-crystalline films. However, in this study, we find that the films degrade with the formation of nanoislands when evaporating VOx onto YSZ at a substrate temperature >500 °C. The nanoislands are epitaxial, i.e., Y-doped VO2(R) at an oxygen partial pressure (Formula presented.) < 30 mTorr, and YVO4 at (Formula presented.) > 50 mTorr. Energy-dispersive X-ray spectroscopy shows that the rapid diffusion of vanadium and yttrium plays a critical role in film degradation. The degradation mechanism revealed herein guides the fabrication of VOx films for energy and electronic device applications. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
http://hdl.handle.net/20.500.11750/10885
DOI
10.1002/adem.201900918
Publisher
John Wiley & Sons Ltd.
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이신범
Lee, Shinbuhm이신범

Department of Physics and Chemistry

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