Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 성시준 | - |
dc.contributor.author | 박시내 | - |
dc.contributor.author | 황대규 | - |
dc.contributor.author | 김대환 | - |
dc.contributor.author | 강진규 | - |
dc.date.accessioned | 2020-02-25T02:58:25Z | - |
dc.date.available | 2020-02-25T02:58:25Z | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/11354 | - |
dc.description.abstract | The present invention provides a 3-dimensional P-N junction solar cell composed of a base board coated with a back plate on the upper face of the same; a P type semiconductor thin film formed on the top side of the back plate which has a 3-dimensional porous structure and is composed of P type semiconductor crystal grains; a N type buffer layer formed on the surface of the crystal grains of the said P type semiconductor thin film with playing a role of coating the thin film; and a transparent electrode formed on the surface of the crystal grains of the P type semiconductor thin film on which the N type buffer layer is formed. The solar cell of the present invention is a P-N junction solar cell including a 3-dimensional photo catalytic thin film, which can provide an improved photoelectric conversion efficiency, compared with the conventional P-N junction solar cell, owing to the formation of the N-type buffer layer on the surface of the crystal grains of the 3-dimensional P type semiconductor thin film. | - |
dc.title | 3차원 P-N접합구조 태양전지 및 이의 제조방법 | - |
dc.title.alternative | SOLAR CELL HAVING THREE-DIMENSIONAL P-N JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING SAME | - |
dc.type | Patent | - |
dc.publisher.country | US | - |
dc.identifier.patentApplicationNumber | 15-025677 | - |
dc.date.application | 2016-03-29 | - |
dc.identifier.patentRegistrationNumber | 10-134-930 | - |
dc.date.registration | 2018-11-20 | - |
dc.contributor.assignee | (재)대구경북과학기술원(100/100) | - |
dc.description.claim | 1. A 3-dimensional P-N junction solar cell comprising: a base board coated with a back plate on the upper face of the same;a P type semiconductor thin film formed on the top side of the back plate which has a 3-dimensional porous structure and is composed of P type semiconductor crystal grains;a N type buffer layer formed on the surface of the crystal grains of the said P type semiconductor thin film with playing a role of coating the thin film; anda transparent electrode formed on the surface of the crystal grains of the P type semiconductor thin film on which the N type buffer layer is formed. | - |
dc.type.iprs | 특허 | - |
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