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Self-alignment of bottom CZTSSe by patterning of an Al2O3 intermediate layer

Title
Self-alignment of bottom CZTSSe by patterning of an Al2O3 intermediate layer
Authors
Hong SanghunKim, Se-YunSon, Dae-HoKim, Seung-HyunKim, Young-IllYang, Kee-JeongHeo Young-WooKang, Jin-KyuKim, Dae-Hwan
DGIST Authors
Son, Dae-Ho; Yang, Kee-JeongKang, Jin-KyuKim, Dae-Hwan
Issue Date
2020-01
Citation
Nanomaterials, 10(1), 43
Type
Article
Article Type
Article
Author Keywords
CZTSSeIntermediate layerMetal precursorSelf-alignmentTwo-stepWettability
Keywords
SOLAR-CELL
ISSN
2079-4991
Abstract
When CZTSSe is synthesized using a metal precursor, large voids of nonuniform size form at Mo back contact side. Herein, we demonstrate that the voids and CZTSSe in the lower part of the CZTSSe double layer can be controlled by using an Al2O3-patterned Mo substrate. The CZTSSe in the lower part self-aligns on the Mo-exposed area, while the voids self-align on the Al2O3-coated area. The origin of the self-alignment is expected to be the difference in bonding characteristics between liquid Sn and the metal or oxide surface, e.g., Al2O3. Good wettability generally forms between nonreactive liquid metals and metal surfaces due to the strong metallic bonding. By contrast, poor wettability generally forms between nonreactive liquid metals and oxide surfaces due to the weak van der Waals bonding between the liquid metal and the oxide layer. When the patterning was added, the device efficiency tended to decrease from 8.6% to 10.5%. © 2019 by the authors. Licensee MDPI, Basel, Switzerland.
URI
http://hdl.handle.net/20.500.11750/11406
DOI
10.3390/nano10010043
Publisher
MDPI AG
Related Researcher
Files:
Collection:
Division of Energy Technology1. Journal Articles


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