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Title
Quantum interference effect in few-layered transition metal dichalcogenide
DGIST Authors
Park, JinwanYoshida, KenjiAn, Sung JinHirakawa, KazuhikoJung, MinkyungSeo, Jungpil
Issued Date
2020-03
Citation
Park, Jinwan. (2020-03). Quantum interference effect in few-layered transition metal dichalcogenide. doi: 10.1016/j.cap.2020.01.007
Type
Article
Article Type
Article
Author Keywords
TMDCReS2Quantum interferenceFabry-PerotUCF
Keywords
FIELD-EFFECT TRANSISTORSPHASE-TRANSITIONSEMICONDUCTOR
ISSN
1567-1739
Abstract
Van der Waals layered transition metal dichalcogenides (TMDCs), as atomically flat two-dimensional materials, have been studied extensively in both fundamental science and application fields in recent years. The reduced-dimensional properties of TMDCs not only provide a route for the fabricating of efficient field effect transistors and optoelectronic devices but also suggest the possibility of the devices that utilize quantum coherency. In this work, we characterize the electron transport properties of ReS2, one of the TMDCs, at both room temperature and low temperature. Of particular note, we measured strong quantum conductance oscillations as a function of the gate voltages and source-drain voltages at reduced temperature, which is evidence of quantum coherent transport. This work unambiguously establishes ReS2 as a promising candidate for future quantum materials. © 2020
URI
http://hdl.handle.net/20.500.11750/11424
DOI
10.1016/j.cap.2020.01.007
Publisher
Korean Physical Society
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