Cited 3 time in webofscience Cited 5 time in scopus

Sol-gel Processed Yttrium-doped SnO2 Thin Film Transistors

Title
Sol-gel Processed Yttrium-doped SnO2 Thin Film Transistors
Authors
Lee, ChangminLee, Won-YongLee, HyunjaeHa, SeunghyunBae, Jin-HyukKang, In-ManKang, HongkiKim, KwangeunJang, Jaewon
DGIST Authors
Lee, Changmin; Lee, Won-Yong; Lee, Hyunjae; Ha, Seunghyun; Bae, Jin-Hyuk; Kang, In-Man; Kang, Hongki; Kim, Kwangeun; Jang, Jaewon
Issue Date
2020-02
Citation
Electronics, 9(2), 254
Type
Article
Article Type
Article
Author Keywords
sol-gelSnO2thin film transistorYttrium doping
Keywords
PERFORMANCETEMPERATURE
ISSN
2079-9292
Abstract
Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive Vth shift. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
URI
http://hdl.handle.net/20.500.11750/11514
DOI
10.3390/electronics9020254
Publisher
MDPI AG
Related Researcher
  • Author Kang, Hongki Advanced Electronic Devices Research Group(AEDRG) - Kang Lab.
  • Research Interests Bioelectronics; Neural interfaces; Flexible electronics; Printed electronics; 바이오전자; 신경 인터페이스; 뇌공학; 플렉서블 전자; 반도체 소자; 인쇄 전자
Files:
Collection:
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Kang Lab.1. Journal Articles


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