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Two-dimensional Nanoelectronic Devices toward High Frequency Applications : From SynTheses to Applications

Title
Two-dimensional Nanoelectronic Devices toward High Frequency Applications : From SynTheses to Applications
Authors
Yang, Jae Hoon
DGIST Authors
Yang, Jae Hoon; Cho, Chang HeeJang, Jae Eun
Advisor(s)
장재은
Co-Advisor(s)
Cho, Chang Hee
Issue Date
2020
Available Date
2020-06-23
Degree Date
2020-02
Type
Thesis
Description
Graphene, CVD, Graphene-based Tunneling Diode, RF Transmission Line, Graphene Doping
Table Of Contents
Chapter 1. Introduction to Graphene in Electronic Applications What is the graphene 1.1 What is the graphene - 1 1.1.1 Carbon Allotropes - 1 1.1.2 Basic of Graphene -2 1.2 Outstanding Properties of the Graphene - 4 1.3 Advances in Graphene Electronics for High Frequency Applications - 6 1.4 Objectives of Theses - 14 1.5 Theses Outline - 15 Chapter 2. Electronic Devices Compatible Large-Area Graphene SynTheses by Chemical Vapor Deposition 2.1 Introduction and Motivation - 22 2.2 Experimental Methods - 24 2.2.1 Chemical Vapor Deposition System for Graphene Growth - 24 2.2.2 Polymeric Assisted Wet Transfer Process of Graphene - 26 2.2.3 2-Terminal Device Fabrication with Graphene 27 Results and Discussion - 29 2.3 Results and Discussion 2.3.1 Graphene Growth Procedure and Characterization - 29 2.3.2 Optimization of Growth Condition for High Quality of Graphene - 32 2.3.3 Electrical Properties of Synthesized Large Area Graphene- 36 2.4 Conclusion - 38 Chapter 3. Grain Boundary Visualization of CVD grown Graphene 3.1 Introduction and Motivation - 41 3.2 Experimental Methods - 43 3.2.1 Sulfurization Process - 43 3.2.2 Graphene SynTheses and Transfer Method - 44 3.2.3 Spectroscopy Measurement - 44 3.3 Results and Discussion - 45 3.3.1 Sulfurization Process of Cu Catalyst at Grain Boundaries - 45 3.3.2 SEM and EDX Analysis of Sulfurized Cu - 45 3.3.3 Time Evolution of Sulfurization Process - 48 3.3.4 Spatial Raman Mapping of Graphene Grain Boundaries - 51 3.3.5 Electron Diffraction Pattern at Grain Boundaries - 53 3.3.6 Composition and Structural Analysis of Sulfurized Cu - 54 3.4 Conclusion - 57 Chapter 4. Geometrically Enhanced Quantum Tunneling Phenomenon in Graphene-Vacuum Junction 4.1 Introduction and Motivation - 64 4.2 Experimental Methods - 66 4.2.1 Graphene SynTheses and Transfer Method - 66 4.2.2 Measurement and Characterization - 67 4.2.3 Simulation - 67 4.3 Results and Discussion - 68 4.3.1 Basic Device Structures and Its Characterization - 68 4.3.2 Geometric Effects on Quantum Tunneling Phenomenon - 70 4.3.3 Electrical Characteristics of Graphene Tunneling Diode - 73 4.3.4 Underlying Electron Transport Physics in Tunneling Diode - 76 4.4 Conclusion - 80 Chapter 5. Radio-Frequency Transmission Properties of Graphene by Controlling Carrier Concentration 5.1 Introduction and Motivation - 86 5.2 Experimental Methods - 89 5.2.1 Graphene SynTheses and Transfer - 89 5.2.2 RF Transmission Line Device Fabrication - 90 5.2.3 Oxygen Plasma and Amorphous Carbon Doping Process - 90 5.2.4 Electrical Measurement - 91 5.2.5 Spectroscopy Measurement - 91 5.3 Results and Discussion - 92 5.3.1 Fabrications of Coplanar Waveguide (CPW) Transmission Line with Graphene - 92 5.3.2 p-doped Graphene Induced by Oxygen Molecule Adsorption - 93 5.3.3 Stable Charge Transfer Doping of Graphene with Amorphous Carbon Hetero-Junction - 107 5.3.4 Electric Stability Test - 120 5.4 Conclusion - 122 Chapter 6. Summary and Future Work 6.1 Summary of Theses - 130 6.2 Future Work - 131 Summary (in Korean) 133
URI
http://dgist.dcollection.net/common/orgView/200000284176
http://hdl.handle.net/20.500.11750/12025
DOI
10.22677/Theses.200000284176
Degree
Doctor
Department
Information and Communication Engineering
University
DGIST
Related Researcher
  • Author Jang, Jae Eun Advanced Electronic Devices Research Group(AEDRG) - Jang Lab.
  • Research Interests Nanoelectroinc device; 생체 신호 센싱 시스템 및 생체 모방 디바이스; 나노 통신 디바이스
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Collection:
Department of Information and Communication EngineeringThesesPh.D.


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