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dc.contributor.author Lee, Hyeon-Jun ko
dc.contributor.author Abe, Katsumi ko
dc.date.accessioned 2020-07-06T07:10:50Z -
dc.date.available 2020-07-06T07:10:50Z -
dc.date.created 2020-05-28 -
dc.date.issued 2020-06 -
dc.identifier.citation IEEE Electron Device Letters, v.41, no.6, pp.896 - 899 -
dc.identifier.issn 0741-3106 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/12036 -
dc.description.abstract This study is on the degradation phenomenon of oxide semiconductor thin-film transistor under dynamic stress applied to the drain. The current reduction that occurs during the rise and fall of the pulse was clearly observed through electrical measurements and the cause of the current drop was investigated via a two-dimensional device simulation. The results confirmed that while the instantaneous rise of the pulse provides high energy to the electrons ejected to the drain, the rapid drop of the pulse only produces impact ionization rates in very small areas with an electronic backflow to the drain. Furthermore, a model based on these relationships is proposed for asymmetric local degradation by high energy ( hot ) electrons. -
dc.language English -
dc.publisher Institute of Electrical and Electronics Engineers -
dc.title A Study on the Effect of Pulse Rising and Falling Time on Amorphous Oxide Semiconductor Transistors in Driver Circuits -
dc.type Article -
dc.identifier.doi 10.1109/led.2020.2986478 -
dc.identifier.wosid 000541155300026 -
dc.identifier.scopusid 2-s2.0-85085613932 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.contributor.nonIdAuthor Abe, Katsumi -
dc.identifier.citationVolume 41 -
dc.identifier.citationNumber 6 -
dc.identifier.citationStartPage 896 -
dc.identifier.citationEndPage 899 -
dc.identifier.citationTitle IEEE Electron Device Letters -
dc.type.journalArticle Article -
dc.description.isOpenAccess Y -
dc.subject.keywordAuthor Oxide semiconductor -
dc.subject.keywordAuthor a-IGZO -
dc.subject.keywordAuthor impact ionization -
dc.subject.keywordAuthor impact generation -
dc.subject.keywordAuthor asymmetrical local defect -
dc.subject.keywordAuthor degradation -
dc.subject.keywordAuthor pulse stress -
dc.subject.keywordPlus THIN-FILM TRANSISTORS -
dc.subject.keywordPlus OXYGEN -
dc.contributor.affiliatedAuthor Lee, Hyeon-Jun -
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