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Versatile Tunability of the Metal Insulator Transition in (TiO2)m/(VO2)m Superlattices
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Title
Versatile Tunability of the Metal Insulator Transition in (TiO2)m/(VO2)m Superlattices
Issued Date
2020-12
Citation
Eres, Gyula. (2020-12). Versatile Tunability of the Metal Insulator Transition in (TiO2)m/(VO2)m Superlattices. Advanced Functional Materials, 30(51), 2004914. doi: 10.1002/adfm.202004914
Type
Article
Author Keywords
binary oxide superlatticesmetal insulator transitionspulsed laser depositionstrongly correlated oxidesX-ray spectroscopy
Keywords
X-RAY-SCATTERINGSWISS LIGHT-SOURCEPOLARIZATION DEPENDENCEVANADIUM DIOXIDETIO2 001VO2ABSORPTIONRESOLUTIONMETALLIZATIONBEAMLINE
ISSN
1616-301X
Abstract
In contrast to perovskites that share only common corners of cation-occupied octahedra, binary-oxides in addition share edges and faces increasing the versatility for tuning the properties and functionality of reduced dimensionality systems of strongly correlated oxides. This approach for tuning the electronic structure is based on the ability of X-ray spectroscopy methods to monitor the creation and transformation of occupied and unoccupied electronic states produced by interface coupling and lattice distortions. X-ray diffraction reveals a new range of structural metastability in (TiO2)m/(VO2)m/TiO2(001) superlattices with m= 1, 3, 5, 20, 40, and electrical transport measurements show metal insulator transition (MIT) behavior typically associated with presence of high oxygen vacancy concentrations. However, X-ray absorption spectroscopy (XAS) at the Ti and V L3,2-edge and resonant inelastic X-ray scattering (RIXS) at the Ti and V L3-edge show no excitations characteristic of oxygen vacancy induced valance change in V and negligible intensities in Ti RIXS. The unexpected absence of oxygen vacancy related states in the X-ray spectroscopy data suggests that superlattice fabrication is capable of suppressing oxygen vacancy formation while still affording a wide tunability range of the MIT. Achieving a wide range of MIT tunability while reducing or eliminating oxygen vacancies that are detrimental to electrical properties is highly desirable for technological applications of strongly correlated oxides. © 2020 Oak Ridge National Laboratory. Published by Wiley-VCH GmbH
URI
http://hdl.handle.net/20.500.11750/12641
DOI
10.1002/adfm.202004914
Publisher
John Wiley & Sons Ltd.
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Lee, Shinbuhm이신범

Department of Physics and Chemistry

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