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Effect of Sintering Temperature on Dielectric Properties of 72 wt%(Al2O3):28 wt%(SiO2) Ceramics
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Title
Effect of Sintering Temperature on Dielectric Properties of 72 wt%(Al2O3):28 wt%(SiO2) Ceramics
Issued Date
2020-10
Citation
Sahu, Manisha. (2020-10). Effect of Sintering Temperature on Dielectric Properties of 72 wt%(Al2O3):28 wt%(SiO2) Ceramics. Korean Journal of Materials Research, 30(10), 495–501. doi: 10.3740/MRSK.2020.30.10.495
Type
Article
Author Keywords
dielectricferroelectricfilterimpedancelead-free
Keywords
Surface morphologyColloidal processing routeDielectric capacitorsElectrical circuitLead free ceramicsNon-Debye relaxationRemnant polarizationsSintering temperaturesX ray diffractometersSinteringAluminaAluminum oxideDielectric propertiesElectric excitationLow-k dielectricMorphologySilicaSilicon
ISSN
1225-0562
Abstract
The various sintered samples comprising of 72 wt%(Al2O3) : 28 wt%(SiO2) based ceramics were fabricated using a colloidal processing route. The phase analysis of the ceramics was performed using an X-ray diffractometer (XRD) at room temperature confirming the presence of Al2O5Si and Al5.33Si0.67O9.33. The surface morphology of the fracture surface of the different sintered samples having different sizes of grain distribution. The resistive and capacitive properties of the three different sintered samples at frequency sweep (1 kHz to 1 MHz). The contribution of grain and the non-Debye relaxation process is seen for various sintered samples in the Nyquist plot. The ferroelectric loop of the various sintered sample shows a slim shape giving rise to low remnant polarization. The excitation performance of the sample at a constant electric signal has been examined utilizing a designed electrical circuit. The above result suggests that the prepared lead-free ceramic can act as a base for designing of dielectric capacitors or resonators. © Materials Research Society of Korea, All rights reserved.
URI
http://hdl.handle.net/20.500.11750/12646
DOI
10.3740/MRSK.2020.30.10.495
Publisher
Korea Federation of Science and Technology
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Kim, Hoe Joon김회준

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