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dc.contributor.author Ra, Hyun-Soo -
dc.contributor.author Jeong, Min-Hye -
dc.contributor.author Yoon, Taegeun -
dc.contributor.author Kim, Seungsoo -
dc.contributor.author Song, YoungJae -
dc.contributor.author Lee, Jong-Soo -
dc.date.accessioned 2021-01-22T07:04:36Z -
dc.date.available 2021-01-22T07:04:36Z -
dc.date.created 2020-09-02 -
dc.date.issued 2020-10 -
dc.identifier.issn 2198-3844 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/12671 -
dc.description.abstract Heterojunction structures using 2D materials are promising building blocks for electronic and optoelectronic devices. The limitations of conventional silicon photodetectors and energy devices are able to be overcome by exploiting quantum tunneling and adjusting charge balance in 2D p–n and n–n junctions. Enhanced photoresponsivity in 2D heterojunction devices can be obtained with WSe2 and BP as p-type semiconductors and MoS2 and WS2 as n-type semiconductors. In this study, the relationship between photocurrent and the charge balance of electrons and holes in van der Waals heterojunctions is investigated. To observe this phenomenon, a p-WSe2/n-WS2/n-MoS2 heterojunction device with both p–n and n–n junctions is fabricated. The device can modulate the charge carrier balance between heterojunction layers to generate photocurrent upon illumination by selectively applying electrostatic doping to a specific layer. Using photocurrent mapping, the operating transition zones for the device is demonstrated, allowing to accurately identify the locations where photocurrent generates. Finally, the origins of flicker and shot noise at the different semiconductor interfaces are analyzed to understand their effect on the photoresponsivity and detectivity of unit active area (2.5 µm2, λ = 405 nm) in the p-WSe2/n-WS2/n-MoS2 heterojunction device. © 2020 The Authors. Published by Wiley-VCH GmbH -
dc.language English -
dc.publisher John Wiley and Sons Inc -
dc.title Probing the Importance of Charge Balance and Noise Current in WSe2/WS2/MoS(2)van der Waals Heterojunction Phototransistors by Selective Electrostatic Doping -
dc.type Article -
dc.identifier.doi 10.1002/advs.202001475 -
dc.identifier.scopusid 2-s2.0-85089488496 -
dc.identifier.bibliographicCitation Advanced Science, v.7, no.19, pp.2001475 -
dc.description.isOpenAccess TRUE -
dc.subject.keywordAuthor electrostatic doping -
dc.subject.keywordAuthor heterojunctions -
dc.subject.keywordAuthor noise current -
dc.subject.keywordAuthor scanning photocurrent mapping -
dc.subject.keywordAuthor transition metal dichalcogenides -
dc.subject.keywordPlus 2D -
dc.subject.keywordPlus HETEROSTRUCTURE -
dc.subject.keywordPlus BEHAVIOR -
dc.subject.keywordPlus FEW-LAYER MOS2 -
dc.subject.keywordPlus HEXAGONAL BORON-NITRIDE -
dc.subject.keywordPlus MONOLAYER MOS2 -
dc.subject.keywordPlus MONO LAYER -
dc.subject.keywordPlus WSE2 -
dc.subject.keywordPlus TRANSITION -
dc.subject.keywordPlus GRAPHENE -
dc.citation.number 19 -
dc.citation.startPage 2001475 -
dc.citation.title Advanced Science -
dc.citation.volume 7 -

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