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Lasing of scarred mode near above threshold in a semiconductor microcavity laser

Title
Lasing of scarred mode near above threshold in a semiconductor microcavity laser
Authors
Lee, In-GooYi, Chang-HwanLee, Ji-WonRyu, JinhyeokGwak, SunjaeOh, Kwang-RyongKim, Chil-Min
DGIST Authors
Kim, Chil-Min
Issue Date
2020-07
Citation
Optics Letters, 45(13), 3809-3812
Type
Article
Article Type
Article
Keywords
UNIDIRECTIONAL EMISSIONDIRECTIONAL EMISSIONWAVE CHAOSLABEL-FREESENSITIVITY
ISSN
0146-9592
Abstract
We study a lasing of mode groups in a fully chaotic rounded D-shape InGaAsP semiconductor microcavity laser when an electrode is smaller than a cavity (inward gap). Although there are numerous unstable periodic orbits supporting resonances, a mode group localized on period-5 unstable periodic orbit is more competitive than the others for our laser configuration of the inward gap. By means of theoretical and numerical analyses with ray and wave dynamics, we show that the analyses well agree with our experimental results. © 2020 Optical Society of America.
URI
http://hdl.handle.net/20.500.11750/12676
DOI
10.1364/OL.398465
Publisher
Optical Society of America
Related Researcher
  • Author Kim, Chil-Min Micro Laser Laboratory
  • Research Interests Laser; Nonlinear Dynamics; Quantum Chaos; Microcavity Laser
Files:
There are no files associated with this item.
Collection:
Department of Emerging Materials ScienceMicro Laser Laboratory1. Journal Articles


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