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Bi-Layered Reram: Multi-Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic
- Title
- Bi-Layered Reram: Multi-Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic
- Authors
- Chung, U-In; Kim, Young-Bae; Lee, Seung Ryul; Lee, Dongsoo; Lee, Chang Bum; Chang, Man; Kim, Kyung min; Hur, Ji Hyun; Lee, Myoung-Jae; Kim, Chang Jung
- DGIST Authors
- Chung, U-In; Kim, Young-Bae; Lee, Seung Ryul; Lee, Dongsoo; Lee, Chang Bum; Chang, Man; Kim, Kyung min; Hur, Ji Hyun; Lee, Myoung-Jae; Kim, Chang Jung
- Issue Date
- 2012-06
- Citation
- Frontiers in Electronic Materials, 53-54
- Type
- Article
- URI
- http://hdl.handle.net/20.500.11750/13397
- DOI
- 10.1002/9783527667703.ch19
- Publisher
- Wiley-VCH Verlag GmbH & Co. KGaA
- Related Researcher
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- Files:
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- Collection:
- Division of Nanotechnology1. Journal Articles
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