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Bi-Layered Reram: Multi-Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic

Title
Bi-Layered Reram: Multi-Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic
Authors
Chung, U-InKim, Young-BaeLee, Seung RyulLee, DongsooLee, Chang BumChang, ManKim, Kyung minHur, Ji HyunLee, Myoung-JaeKim, Chang Jung
DGIST Authors
Chung, U-In; Kim, Young-Bae; Lee, Seung Ryul; Lee, Dongsoo; Lee, Chang Bum; Chang, Man; Kim, Kyung min; Hur, Ji Hyun; Lee, Myoung-Jae; Kim, Chang Jung
Issue Date
2012-06
Citation
Frontiers in Electronic Materials, 53-54
Type
Article
URI
http://hdl.handle.net/20.500.11750/13397
DOI
10.1002/9783527667703.ch19
Publisher
Wiley-VCH Verlag GmbH & Co. KGaA
Related Researcher
Files:
There are no files associated with this item.
Collection:
Division of Nanotechnology1. Journal Articles


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