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Source / Drain 투명 전극을 적용한 a-IGZO TFT의 Ar Plasma 처리 효과

Title
Source / Drain 투명 전극을 적용한 a-IGZO TFT의 Ar Plasma 처리 효과
Translated Title
Effect on Ar Plasma Treatment for a-IGZO TFT with Transparent Source/Drain Electrodes
Authors
김준우이광준정재욱최병대
DGIST Authors
김준우; 이광준; 정재욱; 최병대
Issue Date
2012-06
Citation
대한전자공학회, 35(1), 269-271
Type
Article
Abstract
In this study, we investigated the electrical characteristics of transparent amorphous indium gallium zinc oxide (a-IGZO) TFT in short channel region. In order to reduce the contact resistance, Ar plasma treatment was performed on the source drain region of a-IGZO TFT. The contact resistance of a-IGZO thin film was reduced from 330 ȳȒ㎝ to 150 ȳȒ㎝ after Ar plasma treatment. Upon their exposure to Ar plasma, carrier concentraion of the a-IGZO thin films was increased due to the increase of oxygen vacancy.
URI
http://hdl.handle.net/20.500.11750/13398
http://www.dbpia.co.kr/Journal/PDFViewNew?id=NODE02275002&prevPathCode=
Publisher
대한전자공학회
Related Researcher
Files:
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Collection:
ETC1. Journal Articles
Division of Electronics & Information System1. Journal Articles


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