Source / Drain 투명 전극을 적용한 a-IGZO TFT의 Ar Plasma 처리 효과
- Title
- Source / Drain 투명 전극을 적용한 a-IGZO TFT의 Ar Plasma 처리 효과
- Alternative Title
- Effect on Ar Plasma Treatment for a-IGZO TFT with Transparent Source/Drain Electrodes
- Issued Date
- 2012-06
- Type
- Article
- Abstract
- In this study, we investigated the electrical characteristics of transparent amorphous indium gallium zinc oxide (a-IGZO) TFT in short channel region. In order to reduce the contact resistance, Ar plasma treatment was performed on the source drain region of a-IGZO TFT. The contact resistance of a-IGZO thin film was reduced from 330 ȳȒ㎝ to 150 ȳȒ㎝ after Ar plasma treatment. Upon their exposure to Ar plasma, carrier concentraion of the a-IGZO thin films was increased due to the increase of oxygen vacancy.
- URI
-
http://hdl.handle.net/20.500.11750/13398
http://www.dbpia.co.kr/Journal/PDFViewNew?id=NODE02275002&prevPathCode=
- Publisher
- 대한전자공학회
- Related Researcher
-
-
Choi, Byeongdae ABB연구부
- Research Interests Display
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- Appears in Collections:
- ETC 1. Journal Articles
- Division of Electronics & Information System 1. Journal Articles
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