Source / Drain 투명 전극을 적용한 a-IGZO TFT의 Ar Plasma 처리 효과

Abstract

In this study, we investigated the electrical characteristics of transparent amorphous indium gallium zinc oxide (a-IGZO) TFT in short channel region. In order to reduce the contact resistance, Ar plasma treatment was performed on the source drain region of a-IGZO TFT. The contact resistance of a-IGZO thin film was reduced from 330 ȳȒ㎝ to 150 ȳȒ㎝ after Ar plasma treatment. Upon their exposure to Ar plasma, carrier concentraion of the a-IGZO thin films was increased due to the increase of oxygen vacancy.