Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Lee, Jae Dong | - |
dc.contributor.author | Lee, Su Yeong | - |
dc.date.accessioned | 2017-05-10T08:52:39Z | - |
dc.date.available | 2016-08-18T00:00:00Z | - |
dc.date.issued | 2016 | - |
dc.identifier.uri | http://dgist.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000002296606 | en_US |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/1455 | - |
dc.description.abstract | Layered black phosphorus (BP) attracts great attention as promising candidates for the nanoelectronics and the field-effect transistor (FET) due to their excellent mechanical, optical, thermoelectric, and electronic properties. For a practical device realization, it is important to control electronic transport properties and contact resistance at the interfaces between semiconducting BP and metal electrode. In this work, based on the state-of-the-art band unfolding technique combined with the first-principles calculation, we identify the band structure of BP layer by layer and tune the Schottky barrier height and control the carrier-type of the BP-metal contact. ⓒ 2016 DGIST | - |
dc.description.tableofcontents | 1. INTRODUCTION 1 -- 2. METHOD 6 -- 2.1 The basic concepts of Density functional theory 6 -- 2.2 The Hohenberg-Kohn theorem 6 -- 2.3 The Kohn-Sham equation 8 -- 2.4 The exchange correlation energy 10 -- 2.4.1 The local-density approximation (LDA) 10 -- 2.4.2 Generalized gradient approximation (GGA) 11 -- 2.5 reciprocal lattice 12 -- 2.6 The first Brillouin zone 14 -- 2.7 Unfolding band technique 15 -- 3. Calculation details 16 -- 4. Results and discussion 19 -- 4.1 BP/Ti (0001) metal contact system: BP-projected bands 19 -- 4.2 BP/Sc (0001) metal contact system: BP-projected bands 22 -- 4.3 BP/Al (111) metal contact system: BP-projected bands 24 -- 5. Summary 27 -- 6. References 28 -- 국문요약 |
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dc.format.extent | 38 | - |
dc.language | eng | - |
dc.publisher | DGIST | - |
dc.subject | black phosphorus | - |
dc.subject | Density functional theory | - |
dc.subject | Schottky barrier | - |
dc.subject | contact resistance | - |
dc.subject | 제일원리계산 | - |
dc.subject | 포스포린 | - |
dc.subject | 전계 효과 | - |
dc.subject | 트랜지스터 | - |
dc.subject | 접촉 저항 | - |
dc.subject | 전위 장벽 | - |
dc.title | Layer-by-layer control of black phosphorene-metal contact; Schottky barrier and carrier polarity | - |
dc.type | Thesis | - |
dc.identifier.doi | 10.22677/thesis.2296606 | - |
dc.description.alternativeAbstract | 흑린은 인 원자로 이루어진 2차원 물질 포스포린이 적층된 구조로 박막으로서의 응용 가능성과 적절한 밴드갭과 우수한 전자이동도를 가지고 있어 새로운 이차원 반도체 소자에 대한 연구가 활발하게 진행중이다. 소자를 구현하기 위해서는 반도체와 금속에서 발생하는 접촉 저항과 전자전달특성을 조절하는 것이 중요하다 ⓒ 2016 DGIST | - |
dc.description.degree | Master | - |
dc.contributor.department | Emerging materials Science | - |
dc.contributor.coadvisor | Lee, Jong Soo | - |
dc.date.awarded | 2016. 8 | - |
dc.publisher.location | Daegu | - |
dc.description.database | dCollection | - |
dc.date.accepted | 2016-08-18 | - |
dc.contributor.alternativeDepartment | 대학원 신물질과학전공 | - |
dc.contributor.affiliatedAuthor | Lee, Su Yeong | - |
dc.contributor.affiliatedAuthor | Lee, Jae Dong | - |
dc.contributor.affiliatedAuthor | Lee, Jong Soo | - |
dc.contributor.alternativeName | 이수영 | - |
dc.contributor.alternativeName | 이재동 | - |
dc.contributor.alternativeName | 이종수 | - |