Layer-by-layer control of black phosphorene-metal contact; Schottky barrier and carrier polarity

Abstract

Layered black phosphorus (BP) attracts great attention as promising candidates for the nanoelectronics and the field-effect transistor (FET) due to their excellent mechanical, optical, thermoelectric, and electronic properties. For a practical device realization, it is important to control electronic transport properties and contact resistance at the interfaces between semiconducting BP and metal electrode. In this work, based on the state-of-the-art band unfolding technique combined with the first-principles calculation, we identify the band structure of BP layer by layer and tune the Schottky barrier height and control the carrier-type of the BP-metal contact. ⓒ 2016 DGIST