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Facet-Oriented Coupling Enables Fast and Sensitive Colloidal Quantum Dot Photodetectors
- Biondi, Margherita ;
- Choi, Min-Jae ;
- Wang, Zhibo ;
- Wei, Mingyang ;
- Lee, Seungjin ;
- Choubisa, Hitarth ;
- Sagar, Laxmi Kishore ;
- Sun, Bin ;
- Baek, Se-Woong ;
- Chen, Bin ;
- Todorovic, Petar ;
- Najarian, Amin Morteza ;
- Rasouli, Armin Sedighian ;
- Nam, Dae-Hyun ;
- Vafaie, Maral ;
- Li, Yuguang C. ;
- Bertens, Koen ;
- Hoogland, Sjoerd ;
- Voznyy, Oleksandr ;
- de Arquer, F. Pelayo Garcia ;
- Sargent, Edward H.
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- Title
- Facet-Oriented Coupling Enables Fast and Sensitive Colloidal Quantum Dot Photodetectors
- Issued Date
- 2021-08
- Citation
- Biondi, Margherita. (2021-08). Facet-Oriented Coupling Enables Fast and Sensitive Colloidal Quantum Dot Photodetectors. Advanced Materials, 33(33). doi: 10.1002/adma.202101056
- Type
- Article
- Author Keywords
- colloidal atomic layer deposition ; colloidal quantum dots ; coupling ; facets ; photodetectors
- Keywords
- ELECTRONIC-STRUCTURE ; PBS NANOCRYSTALS ; CHARGE-TRANSPORT ; SOLAR-CELLS ; SHAPE ; SURFACE ; INKS ; PSEUDOPOTENTIALS ; MOBILITY
- ISSN
- 0935-9648
- Abstract
-
Charge carrier transport in colloidal quantum dot (CQD) solids is strongly influenced by coupling among CQDs. The shape of as-synthesized CQDs results in random orientational relationships among facets in CQD solids, and this limits the CQD coupling strength and the resultant performance of optoelectronic devices. Here, colloidal-phase reconstruction of CQD surfaces, which improves facet alignment in CQD solids, is reported. This strategy enables control over CQD faceting and allows demonstration of enhanced coupling in CQD solids. The approach utilizes post-synthetic resurfacing and unites surface passivation and colloidal stability with a propensity for dots to couple via (100):(100) facets, enabling increased hole mobility. Experimentally, the CQD solids exhibit a 10x increase in measured hole mobility compared to control CQD solids, and enable photodiodes (PDs) exhibiting 70% external quantum efficiency (vs 45% for control devices) and specific detectivity, D* > 10(12) Jones, each at 1550 nm. The photodetectors feature a 7 ns response time for a 0.01 mm(2) area-the fastest reported for solution-processed short-wavelength infrared PDs.
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- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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