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Odd Integer Quantum Hall States with Interlayer Coherence in Twisted Bilayer Graphene

Title
Odd Integer Quantum Hall States with Interlayer Coherence in Twisted Bilayer Graphene
Author(s)
Kim, YoungwookMoon, PilkyungWatanabe, KenjiTaniguchi, TakashiSmet, Jurgen H.
Issued Date
2021-05
Citation
Nano Letters, v.21, no.10, pp.4249 - 4254
Type
Article
Author Keywords
Bose−Einstein condensationinterlayer coherencetwisted bilayer graphenequantum Hall effect
Keywords
Half-fillingMagnetic breakdownOdd integersQuantum hallQuantum Hall stateTwisted bilayersQuantum theoryBose-Einstein condensationGrapheneQuantum Hall effectStatistical mechanicsCoherent stateGraphene layers
ISSN
1530-6984
Abstract
We report on the quantum Hall effect in two stacked graphene layers rotated by 2°. The tunneling strength among the layers can be varied from very weak to strong via the mechanism of magnetic breakdown when tuning the density. Odd-integer quantum Hall physics is not anticipated in the regime of suppressed tunneling for balanced layer densities, yet it is observed. We interpret this as a signature of Coulomb interaction induced interlayer coherence and Bose-Einstein condensation of excitons that form at half filling of each layer. A density imbalance gives rise to reentrant behavior due to a phase transition from the interlayer coherent state to incompressible behavior caused by simultaneous condensation of both layers in different quantum Hall states. With increasing overall density, magnetic breakdown gains the upper hand. As a consequence of the enhanced interlayer tunneling, the interlayer coherent state and the phase transition vanish. © 2021 American Chemical Society. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/15509
DOI
10.1021/acs.nanolett.1c00360
Publisher
American Chemical Society
Related Researcher
  • 김영욱 Kim, Youngwook 화학물리학과
  • Research Interests Quantum Transport; Mesoscopic Physics
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Appears in Collections:
Department of Physics and Chemistry Topological Quantum Device Lab 1. Journal Articles

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