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Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots

Title
Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots
Author(s)
An, Sung JinBae, Myung-HoLee, Myoung-JaeSong, Man SukMadsen, Morten H.Nygard, JesperSchonenberger, ChristianBaumgartner, AndreasSeo, JungpilJung, Minkyung
Issued Date
2022-09
Citation
Nanoscale Advances, v.4, no.18, pp.3816 - 3823
Type
Article
Keywords
ACCURACY
ISSN
2516-0230
Abstract
We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines. © 2022 The Author(s).
URI
http://hdl.handle.net/20.500.11750/17089
DOI
10.1039/d2na00372d
Publisher
The Royal Society of Chemistry
Related Researcher
  • 이명재 Lee, Myoung-Jae
  • Research Interests Next generation semiconductor material/device; 차세대 반도체 소재/소자; Memristor; 멤리스터; Neuromorphic device; 뉴로모픽 소자; Nonvolatile resistance memory; 비휘발성 저항변화메모리
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Appears in Collections:
Division of Nanotechnology 1. Journal Articles
Division of Nanotechnology Quantum Nanoelectronic Devices Lab 1. Journal Articles

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