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Robust Interlayer-Coherent Quantum Hall States in Twisted Bilayer Graphene
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Title
Robust Interlayer-Coherent Quantum Hall States in Twisted Bilayer Graphene
Issued Date
2023-01
Citation
Kim, Dohun. (2023-01). Robust Interlayer-Coherent Quantum Hall States in Twisted Bilayer Graphene. Nano Letters, 23(1), 163–169. doi: 10.1021/acs.nanolett.2c03836
Type
Article
Author Keywords
Twisted Bilayer GrapheneLarge Twist AngleBose−Einstein CondensationExciton CondensationQuantum Hall EffectInterlayer-Coherence
Keywords
FRACTIONAL CHERN INSULATORSCORRELATED STATESGRAPHENETRANSITIONSPINFERROMAGNETISMREALIZATIONPHASEQUANTUM HALL STATES
ISSN
1530-6984
Abstract
We introduce a novel two-dimensional electronic system with ultrastrong interlayer interactions, namely, twisted bilayer graphene with a large twist angle, as an ideal ground for realizing interlayer-coherent excitonic condensates. In these systems, sub-nanometer atomic separation between the layers allows significant interlayer interactions, while interlayer electron tunneling is geometrically suppressed due to the large twist angle. By fully exploiting these two features we demonstrate that a sequence of odd-integer quantum Hall states with interlayer coherence appears at the second Landau level (N = 1). Notably the energy gaps for these states are of order 1 K, which is several orders of magnitude greater than those in GaAs. Furthermore, a variety of quantum Hall phase transitions are observed experimentally. All the experimental observations are largely consistent with our phenomenological model calculations. Hence, we establish that a large twist angle system is an excellent platform for high-temperature excitonic condensation. © 2022 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/17367
DOI
10.1021/acs.nanolett.2c03836
Publisher
American Chemical Society
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김영욱
Kim, Youngwook김영욱

Department of Physics and Chemistry

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