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ZnO Wurtzite Single Crystals Prepared by Nanorod-Assisted Epitaxial Lateral Overgrowth

Title
ZnO Wurtzite Single Crystals Prepared by Nanorod-Assisted Epitaxial Lateral Overgrowth
Author(s)
Kim, Dong ChanLee, Ju HoCho, Hyung KounKim, Jae HyeonLee, Jeong Yong
Issued Date
2010-01
Citation
Crystal Growth and Design, v.10, no.1, pp.321 - 326
Type
Article
Keywords
FILMSGallium NitrideGANGROWTHLIGHT-emITTING-DIODESTRANSISTORSTRANSPARENT
ISSN
1528-7483
Abstract
We have developed a novel method to grow thick, single crystalline ZnO films for the use of supporting layers by employing nanorod-assisted epitaxial lateral overgrowth (NRELO). The NRELO ZnO films were epitaxially grown on vertically arrayed nanorods at reduced temperatures by metalorganic chemical vapor deposition. The resultant films had epitaxial structures similar to the conventional ZnO films on sapphire and relatively low dislocation density. During the growth evolution of the NRELO films, the dominant stress was changed from nearly stress-free in the nanorods to strong in-plane tensile stress in the top region, and the rotation of the (0002) plane clearly disappeared in the NRELO ZnO film. This study shows that ZnO NRELO has the possibility to be used as supporting layers in optoelectronic devices with transparent and vertical stack structures because it exhibited high transparency, electrically semiconducting, and low defect density at the same time. © 2009 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/2497
DOI
10.1021/cg900907d
Publisher
American Chemical Society
Related Researcher
  • 김재현 Kim, Jae Hyun
  • Research Interests 에너지; 배터리; 고체전해질; 태양전지; 전기차; 리튬이온배터리
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Division of Energy & Environmental Technology 1. Journal Articles

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