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The Electro-Optical Behavior of Liquid Crystal Molecules on the Surface of SiO2 Inorganic Thin Films

Title
The Electro-Optical Behavior of Liquid Crystal Molecules on the Surface of SiO2 Inorganic Thin Films
Author(s)
Sung, Shi-JoonYang, Kee-JeongKim, Dae-HwanDo, Yun SeonKang, Jin-KyuChoi, Byeong-Dae
Issued Date
2009-12
Citation
Journal of Nanoscience and Nanotechnology, v.9, no.12, pp.6938 - 6942
Type
Article
Author Keywords
SiO2Inorganic Thin FilmSputteringLiquid Crystals
Keywords
CrystalsElectro-OpticalFilm ThicknessHigh QualityInorganic MaterialsInorganic Thin FilmInorganic Thin FilmsLiquid Crystal AlignmentLiquid Crystal MoleculesLiquid CrystalsMoleculesNegative DielectricPhotochemical StabilitySilicon CompoundsSiO2SputteringSputtering ConditionsSurface MorphologySurface PropertiesSurface RoughnessSwitchingSwitching BehaviorsSwitching TimeThin Film DevicesThin FilmsTrace AnalysisVapor DepositionAlignment
ISSN
1533-4880
Abstract
Inorganic thin films are well known for the liquid crystal alignment layers for LCoS application due to the higher thermal and photochemical stability of inorganic materials. The switching time of liquid crystals is the important factor for the projection application and the faster switching time is required for the high quality display. The switching behavior of liquid crystal molecules on inorganic thin films might be closely related with the surface properties of the inorganic thin films. Therefore the understanding of surface properties of the inorganic thin films is required for the enhancement of the switching time of liquid crystals of LCoS devices. In this work, we prepared the SiO 2 inorganic thin films and the electro-optical behavior of liquid crystal molecules on SiO 2 thin film was investigated. The sputtering condition of SiO 2 thin film was closely related with the thickness and the surface morphology of SiO 2 thin film. The switching time of liquid crystals with negative dielectric constant on SiO 2 inorganic thin films was dominantly affected by the size of protrusion on the surface of SiO 2 thin film and the surface roughness of SiO 2 thin film was also related with the switching time of liquid crystals. From these results, it is possible to prepare the SiO 2 inorganic thin film suitable for the liquid crystal alignment layer for VAN LC mode. © 2009 American Scientific Publishers. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/2503
DOI
10.1166/jnn.2009.1603
Publisher
American Scientific Publishers
Related Researcher
  • 성시준 Sung, Shi-Joon
  • Research Interests Compound Semiconductor Materials & Processes
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Appears in Collections:
Division of Energy & Environmental Technology 1. Journal Articles
Division of AI, Big data and Block chain 1. Journal Articles

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