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Synthesis and electro-optical properties of carbazole derivatives for organic device applications
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Title
Synthesis and electro-optical properties of carbazole derivatives for organic device applications
Issued Date
2009-09
Citation
Kim, Ki-Soo. (2009-09). Synthesis and electro-optical properties of carbazole derivatives for organic device applications. Synthetic Metals, 159(17–18), 1870–1875. doi: 10.1016/j.synthmet.2009.06.009
Type
Article
Author Keywords
CarbazoleElectroluminescenceHost materialHole-transporting material
Keywords
Band Gap EnergyCarbazoleCarbazole DerivativesDiodesDoping (Additives)Double LayersElectroluminescenceELECTROLUMINESCENT DEVICESElectron AffinityElectronic Energy LevelsElectrooptical PropertiesELECTROPHOSPHORESCENCEGreen emissionsGreen LightHIGH-EFFICIENCYHole-Transporting MaterialHole-Transporting MaterialsHole-Transporting PropertyHOSTHost MaterialHost MaterialsIonization PotentialIR(ppy)3IridiumLightLIGHT-emITTING DEVICESLight emissionLight TransmissionMaterialsMaximum LuminanceMECHANISMSMulti-Layer DevicesOLEDSOptical PropertiesOrganic DevicesPolymerSingle BondSound Insulating MaterialsSuzuki-Coupling ReactionSynthesis (Chemical)Two-Materials
ISSN
0379-6779
Abstract
Two materials, DNCz and TCzPB, which contain carbazole moieties and exhibit high band gap energies, were synthesized via C{single bond}N coupling and Suzuki coupling reactions, respectively. The ionization potential and electron affinity of the synthesized TCzPB were measured at 5.89 and 2.39 eV, respectively, implying that it is suitable for a host material. A doped multilayer device, ITO/DNTPD/NPD/TCzPB + Ir(ppy)3/BCP/Alq3/LiF/Al, exhibited a bright green emission with a maximum luminance of 27,200 cd/m2 (17.6 cd/A at 18.0 V) when the synthesized TCzPB was used as the host material for a phosphorescent green dopant. The compound DNCz exhibited similar electronic energy levels to those of NPD, and was applied as a hole-transporting material. Bright green light originated from the Alq3 layer was observed in the double layer device, ITO/DNCz/Alq3/LiF/Al. The high hole-transporting property of DNCz was also demonstrated. © 2009 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/2505
DOI
10.1016/j.synthmet.2009.06.009
Publisher
Elsevier
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김참
Kim, Cham김참

Division of Nanotechnology

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