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Title
A Monolithically Integrated Pressure/Oxygen/Temperature Sensing SoC for Multimodality Intracranial Neuromonitoring
Issued Date
2014-11
Citation
Chan, Wai Pan. (2014-11). A Monolithically Integrated Pressure/Oxygen/Temperature Sensing SoC for Multimodality Intracranial Neuromonitoring. IEEE Journal of Solid-State Circuits, 49(11), 2449–2461. doi: 10.1109/JSSC.2014.2345754
Type
Article
Author Keywords
Capacitance to voltage converter (CVC)capacitive pressure sensorelectrochemical oxygen sensorintracranial pressure (ICP)temperature sensortraumatic brain injury (TBI)
Keywords
SMART TEMPERATURE SENSOR3-SIGMA INACCURACYDISSOLVED-OXYGENPRESSURE SENSORCMOSCOMPENSATIONMICROSYSTEMWIRELESS10-BITINJURY
ISSN
0018-9200
Abstract
A fully integrated SoC for multimodality intracranial neuromonitoring is presented in this paper. Three sensors including a capacitive MEMS pressure sensor, an electrochemical oxygen sensor and a solid-state temperature sensor are integrated together in a single chip with their respective interface circuits. Chopper stabilization and dynamic element matching techniques are applied in sensor interface circuits to reduce circuit noise and offset. On-chip calibration is implemented for each sensor to compensate process variations. Measured sensitivity of the pressure, oxygen, and temperature sensors are 18.6 aF/mmHg, 194 pA/mmHg, and 2 mV/°C, respectively. Implemented in 0.18 μm CMOS, the SoC occupies an area of 1.4 mm × 4 mm and consumes 166 μW DC power. A prototype catheter for intracranial pressure (ICP) monitoring has been implemented and the performance has been verified with ex vivo experiment. © IEEE.
URI
http://hdl.handle.net/20.500.11750/2638
DOI
10.1109/JSSC.2014.2345754
Publisher
Institute of Electrical and Electronics Engineers Inc.
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