Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05
- Title
- Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05
- Author(s)
- Meixner, Philipp ; Lim, Seong Joon ; Park, Joonbum ; Kim, Jun Sung ; Fischer, Saskia F. ; Seo, Jungpil ; Kuk, Young
- Issued Date
- 2016-01-15
- Citation
- Applied Surface Science, v.361, pp.185 - 189
- Type
- Article
- Author Keywords
- Scanning tunneling microscopy ; Topological insulators ; Niobium ; Bi2Te2Se
- Keywords
- Annealing Temperatures ; Bi2Te2Se ; DEPOSITION ; Electric Insulators ; High Energy Electron Beams ; Layer-by-Layer Growth ; Monolayers ; N-Type Doping ; Niobium ; Scanning Tunneling Microscopy ; Scanning Tunneling Microscopy and Spectroscopy ; Sub-Monolayers ; Superconductivity ; SURFACE-STATES ; TemPERATURE ; THIN-FILMS ; Threedimensional (3-D) ; Topological Insulators ; TRANSITION ; Transition Metals
- ISSN
- 0169-4332
- Abstract
- While applying a new cleaving method, we investigated the growth of Nb on the three-dimensional (3D) topological insulator (TI) Bi2Te1.95Se1.05 by scanning tunneling microscopy and spectroscopy. After the deposition of nearly a full monolayer of Nb by high-energy electron-beam evaporation, we observed a downshift of the bands and the Dirac point on the TI surface, which is the result of an n-type doping of the TI by transition metal adatoms. Extra peaks in the spectroscopy results upon Nb deposition might indicate a Rashba-split of the bulk bands. Nb grew in small 10 nm wide islands upon sub-monolayer growth and in a layer-by-layer growth mode up to an annealing temperature of 450 °C. © 2015 Elsevier B.V. All rights reserved.
- Publisher
- Elsevier B.V.
- Related Researcher
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Seo, Jungpil 화학물리학과
- Research Interests Topological Matters; High Tc Superconductors; Low dimensional Quantum Matters
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- Appears in Collections:
- ETC 1. Journal Articles
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