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Department of Physics and Chemistry
Spin Nanotech Laboratory
1. Journal Articles
Exchange Bias Effect Determined by Anisotropic Magnetoresistance in CoxNi1-xO/Ni0.8Fe0.2 Bilayer System
Yoo, Woosuk
;
Choo, Seongmin
;
Lee, Kyujoon
;
Jo, Sinyong
;
You, Chun-Yeol
;
Hong, Jung-Il
;
Jung, Myung-Hwa
Department of Physics and Chemistry
Spin Nanotech Laboratory
1. Journal Articles
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Title
Exchange Bias Effect Determined by Anisotropic Magnetoresistance in CoxNi1-xO/Ni0.8Fe0.2 Bilayer System
Issued Date
2015-11
Citation
Yoo, Woosuk. (2015-11). Exchange Bias Effect Determined by Anisotropic Magnetoresistance in CoxNi1-xO/Ni0.8Fe0.2 Bilayer System. IEEE Transactions on Magnetics, 51(11). doi: 10.1109/TMAG.2015.2435738
Type
Article
Author Keywords
Anisotropic magnetoresistance (AMR)
;
exchange bias
;
magnetic anisotropy
;
magnetic films
Keywords
SPIN-VALVES
ISSN
0018-9464
Abstract
We prepared bilayer systems composed of the ferromagnetic (FM) layer Ni0.8Fe0.2 and the anti-FM (AFM) layer CoxNi1-xO (x = 0.3, 0.4, 0.5, and 0.6) using the dc/RF magnetron sputtering methods. Coercive field HC and exchange bias field HE , the shift field in hysteresis loop, were observed in all the Ni0.8Fe0.2/CoxNi1-xO bilayer systems after field cooling. The changes of HC and HE were explicitly studied for various parameters, such as the composition of AFM material x, the measured temperature T, and the direction of applied magnetic field. Measured anisotropic magnetoresistance (AMR) was analyzed to extract the HC and HE , since the peaks (maximum or minimum) in AMR do not appear exactly at the coercive field HC of the magnetic hysteresis measurement. We propose a new approach for the analysis of AMR to determine HC and HEB along the field angle θ with respect to the field-cooling direction. The results were compared with the variations of HEB and HC reported earlier. © 2015 IEEE.
URI
http://hdl.handle.net/20.500.11750/2826
DOI
10.1109/TMAG.2015.2435738
Publisher
Institute of Electrical and Electronics Engineers Inc.
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Hong, Jung-Il
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