Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Joonwoo | - |
dc.contributor.author | Myung, Sung | - |
dc.contributor.author | Noh, Hee-Yeon | - |
dc.contributor.author | Jeong, Soon Moon | - |
dc.contributor.author | Jeong, Jaewook | - |
dc.date.available | 2017-07-11T05:46:41Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2015-09 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2853 | - |
dc.description.abstract | The gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) having an asymmetric graphene electrode structure are studied. A large positive shift in the threshold voltage, which is well fitted to a stretched-exponential equation, and an increase in the subthreshold slope are observed when drain current stress is applied. This is due to an increase in temperature caused by power dissipation in the graphene/a-IGZO contact region, in addition to the channel region, which is different from the behavior in a-IGZO TFTs with a conventional transparent electrode. © 2015 Author(s). | - |
dc.publisher | American Institute of Physics Publishing | - |
dc.title | Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4931084 | - |
dc.identifier.scopusid | 2-s2.0-84942028189 | - |
dc.identifier.bibliographicCitation | AIP Advances, v.5, no.9 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | Amorphous Films | - |
dc.subject.keywordPlus | Channel Region | - |
dc.subject.keywordPlus | Contact Regions | - |
dc.subject.keywordPlus | Current Stress | - |
dc.subject.keywordPlus | Drain Current | - |
dc.subject.keywordPlus | Electrodes | - |
dc.subject.keywordPlus | Gallium | - |
dc.subject.keywordPlus | Graphene | - |
dc.subject.keywordPlus | GRAPHENE ELECTRODES | - |
dc.subject.keywordPlus | Graphite Electrodes | - |
dc.subject.keywordPlus | Positive Shift | - |
dc.subject.keywordPlus | Semiconducting Indium Compounds | - |
dc.subject.keywordPlus | Stretched Exponential | - |
dc.subject.keywordPlus | Subthreshold Slope | - |
dc.subject.keywordPlus | Thin Film Transistors | - |
dc.subject.keywordPlus | Thin Films | - |
dc.subject.keywordPlus | Threshold Voltage | - |
dc.subject.keywordPlus | Transparent Electrode | - |
dc.subject.keywordPlus | Zinc | - |
dc.citation.number | 9 | - |
dc.citation.title | AIP Advances | - |
dc.citation.volume | 5 | - |