DGIST Scholar: Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors

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Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors

Title: Screen-Printed Cu Source/Drain Electrodes for a-InGaZnO Thin-Film Transistors

Author(s): Kim, JH[Kim, Jung-Hye] ; Kim, J[Kim, Joonwoo] ; Lee, GJ[Lee, Gwang Jun] ; Jeong, J[Jeong, Jaewook] ; Choi, B[Choi, Byeongdae]

DGIST Authors: Kim, JH[Kim, Jung-Hye] ; Kim, J[Kim, Joonwoo] ; Lee, GJ[Lee, Gwang Jun] ; Jeong, J[Jeong, Jaewook] ; Choi, B[Choi, Byeongdae]

Subject: A-IGZO ; Copper ; Copper Ink ; Electrical Characteristic ; Electrodes ; Field-Effect Mobilities ; Low-Leakage Current ; ON/OFF Current Ratio ; Oxide-Based TFTs ; Screen Printing ; Semiconducting Organic Compounds ; Source/Drain Electrodes ; Thin-Film Transistor (TFT) ; Thin-Film Transistors (TFTs)

Abstract: We report screen-printed copper source/drain electrodes for a-InGaZnO (a-IGZO) thin-film transistors (TFTs). The best electrical characteristics of the a-IGZO TFTs were a field-effect mobility of 2.06 cm2/Vs, a threshold voltage of 3.40 V, an on/off current ratio of 6.0 × 10 3A/A, and a subthreshold swing of 7.02 V/decade. Resulting TFT performances indicate that blocking the inter-diffusion of Cu and impurities is a key factor to fabricate low leakage current and high performance a-IGZO TFTs with printed Cu S/D electrodes. © 2013 Copyright Taylor and Francis Group, LLC.