Cited 30 time in
Cited 30 time in
Characterization of Impurity Doping and Stress in Si/Ge and Ge/Si Core-Shell Nanowires
- Characterization of Impurity Doping and Stress in Si/Ge and Ge/Si Core-Shell Nanowires
- Fukata, N[Fukata, Naoki]; Mitome, M[Mitome, Masanori]; Sekiguchi, T[Sekiguchi, Takashi]; Bando, Y[Bando, Yoshio]; Kirkham, M[Kirkham, Melanie]; Hong, JI[Hong, Jung-Il]; Wang, ZL[Wang, Zhong Lin]; Snydert, RL[Snydert, Robert L.]
- DGIST Authors
- Hong, JI[Hong, Jung-Il]
- Issue Date
- ACS Nano, 6(10), 8887-8895
- Article Type
- Band-offset; Chemistry; Compressive and Tensile Stress; Conformation; Core-Shell; Core-Shell Nanowires; Core Region; Crystallization; Doping; Doping (Additives); Excitons; Fano Effects; Germanium; High Mobility; Impurity Doping; Impurity Scattering; Macromolecular Substances; Macromolecule; Materials Testing; Mechanical Stress; Methodology; Molecular Conformation; Nanotube; Nanotubes; Nanowires; Particle Size; Phosphorus; Raman Scattering; Shells (Structures); Si/Ge; Silicon; Site Selective; Stress, Mechanical; Surface Properties; Surface Property; Transistor Channels; Ultrastructure; X-Ray Diffraction; X Ray Diffraction
- Core-shell nanowires (NWs) composed of silicon (Si) and germanium (Ge) are key structures for realizing high mobility transistor channels, since the site-selective doping and band-offset in core-shell NWs separate the carrier transport region from the impurity doped region, resulting in the suppression of impurity scattering. Four different types of Si/Ge (i-Si/n-Ge, p-Si/i-Ge) and Ge/Si (n-Ge/i-Si, i-Ge/p-Si) core-shell NWs structures were rationally grown. The surface morphology significantly depended on the types of the core-shell NWs. Raman and X-ray diffraction (XRD) measurements clearly characterized the compressive and tensile stress in the core and shell regions. The observation of boron (B) and phosphorus (P) local vibrational peaks and the Fano effect clearly demonstrated that the B and P atoms are selectively doped into the shell and core regions and electrically activated in the substitutional sites, showing the success of site-selective doping. © 2012 American Chemical Society.
- American Chemical Society
- Related Researcher
Hong, Jung Il
Quantum Electric & Magnetic Materials Laboratory
Electric and Magnetic Properties of Nanostructured Materials; Spintronics
There are no files associated with this item.
- Department of Emerging Materials ScienceQuantum Electric & Magnetic Materials Laboratory1. Journal Articles
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.