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Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

Title
Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method
Authors
Jeong, J[Jeong, Jaewook]Kim, J[Kim, Joonwoo]Lee, GJ[Lee, Gwang Jun]Choi, BD[Choi, Byeong-Dae]
DGIST Authors
Jeong, J[Jeong, Jaewook]; Kim, J[Kim, Joonwoo]; Lee, GJ[Lee, Gwang Jun]; Choi, BD[Choi, Byeong-Dae]
Issue Date
2012-01-09
Citation
Applied Physics Letters, 100(2)
Type
Article
Article Type
Article
Keywords
Amorphous FilmsAmorphous SemiconductorsBack ChannelsElectrical CharacteristicField-Effect MobilitiesNon-UniformityParameter ExtractionParasitic ResistancesProbesSeparate AnalysisThin-Film Transistors (TFTs)Transistors
ISSN
0003-6951
Abstract
We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (μ FEi) and parasitic resistance in source (R s) and drain (R d) electrodes was performed especially for low V GS and V DS conditions. The resulting μ FEi showed typical V GS dependency of amorphous semiconductor TFTs. However, R s and R d showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs. © 2012 American Institute of Physics.
URI
http://hdl.handle.net/20.500.11750/3391
DOI
10.1063/1.3675876
Publisher
American Institute of Physics Publishing
Related Researcher
Files:
There are no files associated with this item.
Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


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