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High-Purity Ultraviolet Electroluminescence from n-ZnO Nanowires/p(+)-Si Heterostructure LEDs with i-MgO Film as Carrier Control Layer
- High-Purity Ultraviolet Electroluminescence from n-ZnO Nanowires/p(+)-Si Heterostructure LEDs with i-MgO Film as Carrier Control Layer
- Jung, BO[Jung, Byung Oh]; Lee, JH[Lee, Ju Ho]; Lee, JY[Lee, Jeong Yong]; Kim, JH[Kim, Jae Hyun]; Cho, HK[Cho, Hyung Koun]
- DGIST Authors
- Kim, JH[Kim, Jae Hyun]
- Issue Date
- Journal of the Electrochemical Society, 159(2), H102-H106
- Article Type
- Active Layer; Asymmetric Bands; Control Layers; Current Voltage Characteristics; Current Voltage Curve; Dielectric Layer; Electroluminescence; Electron Accumulation; Forward Bias; Heterojunctions; High-Purity; Hole Tunneling; Light-Emitting Diodes; Metallorganic Chemical Vapor Deposition; Nanowires; Rectifying Characteristics; Silicon; Ultraviolet Electroluminescence; Ultraviolet Lights; UV Emissions; Visible Emissions; Zinc Oxide; ZnO; ZnO Nanowires
- Pure ultraviolet (UV) light emitting diodes (LEDs) using n-ZnO nanowires as an active layer were fabricated with an insulating MgO dielectric layer as a carrier control layer, where all depositions were continuously performed by metalorganic chemical vapor deposition. The current-voltage curve of the LEDs showed obvious rectifying characteristics, with a threshold voltage of about 7 V in the sample with 4 nm i-MgO. Under the forward bias of the samples with proper MgO thickness, a sharp UV electroluminescence, located at around 380 nm, was emitted from the active ZnO nanowires, while weak visible emission of around 450-700 nm were observed. The pure UV emission from the ZnO nanowires in the n-ZnOi-MgOp-Si heterostructures was attributed to the electron accumulation in the ZnO by asymmetric band offset and preemptive hole tunneling from Si to ZnO by i-MgO. © 2011 The Electrochemical Society.
- Electrochemical Society
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