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Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors
- Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors
- Son, DH[Son, Dae-Ho]; Kim, DH[Kim, Dae-Hwan]; Kim, JH[Kim, Jung-Hye]; Sung, SJ[Sung, Shi-Joon]; Jung, EA[Jung, Eun-Ae]; Kang, JK[Kang, Jin-Kyu]
- DGIST Authors
- Son, DH[Son, Dae-Ho]; Kim, DH[Kim, Dae-Hwan]; Kim, JH[Kim, Jung-Hye]; Jung, EA[Jung, Eun-Ae]; Kang, JK[Kang, Jin-Kyu]
- Issue Date
- Thin Solid Films, 519(20), 6815-6819
- Article Type
- Article; Proceedings Paper
- Ambient Conditions; Bias Stress; Bias Voltage; Channel Layers; Co-Sputtering; Current Ratios; Electric Properties; Electrical Characteristic; Field-Effect Mobilities; Field Effect Transistors; Hafnium; Hafnium Addition; HfInZnO; High-K Material; High-K Materials; Indium; Indium Zinc Oxides; Metal Oxide Thin-Film Transistor; Metallic Compounds; Oxygen Vacancies; Passivation; Photoelectron Spectroscopy; Positive Gate Bias; Room-Temperature; Silica; Thin-Film Devices; Thin-Film Transistors (TFTs); Thin-Films; Threshold Voltage; Transistors; X Ray Photoelectron Spectroscopy; Zinc; Zinc Oxide
- This study reports the performance and stability of hafnium-indium zinc oxide (HfInZnO) thin film transistors (TFTs) with thermally grown SiO2. The HfInZnO channel layer was deposited at room temperature by a co-sputtering system. We examined the effects of hafnium addition on the X-ray photoelectron spectroscopy properties and on the electrical characteristics of the TFTs varying the concentration of the added hafnium. We found that the transistor on-off currents were greatly influenced by the composition of hafnium addition, which suppressed the formation of oxygen vacancies. The field-effect mobility of optimized HfInZnO TFT was 1.34 cm 2 V -1 s -1, along with an on-off current ratio of 10 8 and a threshold voltage of 4.54 V. We also investigated the effects of bias stress on HfInZnO TFTs with passivated and non-passivated layers. The threshold voltage change in the passivated device after positive gate bias stress was lower than that in the non-passivated device. This result indicates that HfInZnO TFTs are sensitive to the ambient conditions of the back surface. © 2011 Elsevier B.V.
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