Role of high-k material for co-sputtered metal oxide thin film transistors

Abstract

We have fabricated thin film transistors (TFTs) using HfInZnO and TaInZnO thin film as active channel layers. The active channel layers were deposited by co-sputtering system. It was found that the on/off ratio of transistors was greatly influenced by the composition of high-k material suppressing formation of oxygen vacancies. The performance of fabricated transistors improved clearly with high-k material amount.