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The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors
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dc.contributor.author Kim, Jung Hye -
dc.contributor.author Son, Dae-Ho -
dc.contributor.author Sung, Shi-Joon -
dc.contributor.author Jung, Eun Ae -
dc.contributor.author Kang, Jin-Kyu -
dc.contributor.author Ha, Ki Ryong -
dc.contributor.author Kim, Dae-Hwan -
dc.date.available 2017-07-11T08:18:01Z -
dc.date.created 2017-06-25 -
dc.date.issued 2010-10-13 -
dc.identifier.isbn 9781617827020 -
dc.identifier.issn 1738-7558 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/3961 -
dc.description.abstract The effects of Zr and Ta contents on characteristics of InZnO films by a sol-gel method and their thin film transistor(TFTs) have been investigated. In particular, the effect of composition variation was studied by using solutions having various metal cation ratios to optimize transistor performance. -
dc.language English -
dc.publisher 한국정보디스플레이학회(The Korean Information Display Society) -
dc.relation.ispartof Proceedings of International Meeting on Information Display(한국정보디스플레이학회:학술대회논문집) -
dc.title The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors -
dc.type Conference Paper -
dc.identifier.scopusid 2-s2.0-79959958410 -
dc.identifier.bibliographicCitation Kim, Jung Hye. (2010-10-13). The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors. 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA Display 2010), 476–477. -
dc.identifier.url http://www.imid.or.kr/2010/down2/Final%20Program.pdf -
dc.citation.conferenceDate 2010-10-11 -
dc.citation.conferencePlace KO -
dc.citation.conferencePlace 서울 -
dc.citation.endPage 477 -
dc.citation.startPage 476 -
dc.citation.title 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA Display 2010) -
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성시준
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