Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Abbas, Kaleem | - |
dc.contributor.author | Hwang, Jaeseok | - |
dc.contributor.author | Bae, Garam | - |
dc.contributor.author | Choi, Hongsoo | - |
dc.contributor.author | Kang, Dae Joon | - |
dc.date.available | 2017-08-10T08:14:05Z | - |
dc.date.created | 2017-08-09 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/4194 | - |
dc.description.abstract | We investigate the effect of electric field on VO2 back-gated field effect transistor (FET) devices. Using hybrid dielectric layers, we demonstrate the highest resistance modulation on the order of 102 in VO2 at a positive gate bias of 80 V (1.6 MV/cm). VO2 FET devices are prepared on SiO2 substrates of different thicknesses (100-300 nm) and hybrid dielectric layers of Al2O3/SiO2 (500 nm). For thicknesses less than 300 nm, no electric-field effects are observed, whereas for a 300 nm thickness, a small decrease in resistance is observed under a 0.2 MV/cm electric field. Under the electrostatic effect, the carrier concentration increases in VO2 devices, decreasing the resistance and the transition temperature from 66.75 to 64 °C. The leakage analysis shows that the interface quality of VO2 films on hybrid dielectric layers can be further improved. These studies suggest a multilevel fast resistance switching with the electric field and give an insight into the gate-source leakage current, which limits the phase transition in VO2 in an electric field. © 2017 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | Control of Multilevel Resistance in Vanadium Dioxide by Electric Field Using Hybrid Dielectrics | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.6b16424 | - |
dc.identifier.scopusid | 2-s2.0-85018506570 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials & Interfaces, v.9, no.15, pp.13571 - 13576 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | vanadium dioxide | - |
dc.subject.keywordAuthor | insulator-metal transition | - |
dc.subject.keywordAuthor | electric field | - |
dc.subject.keywordAuthor | Mott transistor | - |
dc.subject.keywordAuthor | hybrid dielectric | - |
dc.subject.keywordPlus | Carrier Concentration | - |
dc.subject.keywordPlus | Dielectric Materials | - |
dc.subject.keywordPlus | Driven | - |
dc.subject.keywordPlus | Effect Transistors | - |
dc.subject.keywordPlus | Electric Field | - |
dc.subject.keywordPlus | Electric Field Effects | - |
dc.subject.keywordPlus | Electric Fields | - |
dc.subject.keywordPlus | Electrostatic Devices | - |
dc.subject.keywordPlus | Electrostatic Effect | - |
dc.subject.keywordPlus | Field Effect Transistors | - |
dc.subject.keywordPlus | Hybrid Dielectric | - |
dc.subject.keywordPlus | Hybrid Dielectrics | - |
dc.subject.keywordPlus | Insulator Metal Transition | - |
dc.subject.keywordPlus | Interface Quality | - |
dc.subject.keywordPlus | Interfaces (Materials) | - |
dc.subject.keywordPlus | Metal Insulator Transition | - |
dc.subject.keywordPlus | Mott Transistor | - |
dc.subject.keywordPlus | Mott Transition | - |
dc.subject.keywordPlus | Nanobeams | - |
dc.subject.keywordPlus | Oxide Interface | - |
dc.subject.keywordPlus | Phase Transition | - |
dc.subject.keywordPlus | Positive Gate Bias | - |
dc.subject.keywordPlus | Power Field Effect Transistors | - |
dc.subject.keywordPlus | Quality Control | - |
dc.subject.keywordPlus | Resistance Modulation | - |
dc.subject.keywordPlus | Resistance Switching | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Thin Films | - |
dc.subject.keywordPlus | Vanadium | - |
dc.subject.keywordPlus | Vanadium Dioxide | - |
dc.subject.keywordPlus | VO2 | - |
dc.citation.endPage | 13576 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 13571 | - |
dc.citation.title | ACS Applied Materials & Interfaces | - |
dc.citation.volume | 9 | - |
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