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Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure
- Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure
- Hyun, Cheol-Min; Choi, Jeong-Hun; Lee, Myoung-Jae; Ahn, Ji-Hoon
- DGIST Authors
- Lee, Myoung-Jae
- Issue Date
- Applied Physics Letters, 111(1)
- Article Type
- Electric Fields; External Electric Field; Layered Semiconductors; Layered Structures; Metal Semiconductor Interface; Nanocrystals (NCs); Orthorhombic Symmetry; Photo Thermoelectric; Photocurrents; Photoexcited Electrons; Photovoltaic Effects; Semiconductor Lasers; Thermo Electric Equipment; Thermo Electricity; Two Dimensional Materials; Vapor Transport Methods
- The photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 ��V/K, which is 3.5 times larger than that of its bulk counterpart. ? 2017 Author(s).
- American Institute of Physics Inc.
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- Intelligent Devices and Systems Research Group1. Journal Articles
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