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Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure

Title
Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure
Authors
Hyun, Cheol-MinChoi, Jeong-HunLee, Myoung-JaeAhn, Ji-Hoon
DGIST Authors
Lee, Myoung-Jae
Issue Date
2017-06
Citation
Applied Physics Letters, 111(1), 013104
Type
Article
Article Type
Article
ISSN
0003-6951
Abstract
The photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 ��V/K, which is 3.5 times larger than that of its bulk counterpart. ? 2017 Author(s).
URI
http://hdl.handle.net/20.500.11750/4270
DOI
10.1063/1.4992115
Publisher
American Institute of Physics Inc.
Related Researcher
Files:
There are no files associated with this item.
Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


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